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dc.contributor.authorMusztyfaga-Staszuk, Małgorzata
dc.contributor.authorDobrzański, Leszek Adam
dc.contributor.authorRusz, Stanislav
dc.contributor.authorStaszuk, M.
dc.date.accessioned2014-05-21T12:08:00Z
dc.date.available2014-05-21T12:08:00Z
dc.date.issued2014
dc.identifier.citationArchives of Metallurgy and Materials. 2014, vol. 59, issue 1, s. 247-252.cs
dc.identifier.issn1733-3490
dc.identifier.urihttp://hdl.handle.net/10084/101875
dc.description.abstractThe aim of the paper was to apply the newly developed instruments ‘Corescan’ and ‘Sherescan’ in order to measure the essential parameters of producing solar cells in comparison with the standard techniques. The standard technique named the Transmission Line Method (TLM) is one way to monitor contacting process to measure contact resistance locally between the substrate and metallization. Nowadays, contact resistance is measured over the whole photovoltaic cell using Corescanner instrument. The Sherescan device in comparison with standard devices gives a possibility to measure the sheet resistance of the emitter of silicon wafers and determine of both P/N recognition and metal resistance. The Screen Printing (SP) method is the most widely used contact formation technique for commercial silicon solar cells. The contact resistance of manufactured front metallization depends of both the paste composition and co-firing conditions. Screen printed front side metallization and next to co-fired in the infrared conveyor furnace was carried out at various temperature from 770°C to 920°C. The silver paste used in the present paper is commercial. The investigations were carried out on monocrystalline silicon wafers. The topography of co-fired in the infrared belt furnace front metallization was investigated using the atomic force microscope and scanning electron microscope (SEM). There were researched also cross sections of front contacts using SEM microscope. Front contacts of the solar cells were formed on non-textured silicon surface with coated antireflection layer. On one hand, based on electrical properties investigations using Sherescan instrument it was obtained the knowledge of the emitter sheet resistance across the surface of a wafer, what is essential in optimizing the emitter diffusion process. On the other hand, it was found using Corescan instrument that the higher temperature apparently results in a strongly decreased contact resistance.cs
dc.format.extent1545053 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoencs
dc.publisherDe Gruytercs
dc.relation.ispartofseriesArchives of Metallurgy and Materialscs
dc.relation.urihttp://dx.doi.org/10.2478/amm-2014-0040cs
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/cs
dc.subjectelectrical propertiescs
dc.subjectsolar cellscs
dc.subjectscreen printingcs
dc.subjectcontact resistancecs
dc.titleApplication examples for the different measurement modes of electrical properties of the solar cellscs
dc.typearticlecs
dc.identifier.doi10.2478/amm-2014-0040
dc.rights.accessopenAccess
dc.type.versionpublishedVersioncs
dc.type.statusPeer-reviewedcs
dc.description.sourceWeb of Sciencecs
dc.description.volume59cs
dc.description.issue1cs
dc.description.lastpage252cs
dc.description.firstpage247cs
dc.identifier.wos000333983900040


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