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dc.contributor.authorChochol, Jan
dc.contributor.authorPostava, Kamil
dc.contributor.authorČada, Michael
dc.contributor.authorVanwolleghem, Mathias
dc.contributor.authorMičica, Martin
dc.contributor.authorHalagačka, Lukáš
dc.contributor.authorLampin, Jean-François
dc.contributor.authorPištora, Jaromír
dc.date.accessioned2017-08-28T08:14:30Z
dc.date.available2017-08-28T08:14:30Z
dc.date.issued2017
dc.identifier.citationJournal of the European Optical Society-Rapid Publications. 2017, vol. 13, art. no. 13.cs
dc.identifier.issn1990-2573
dc.identifier.urihttp://hdl.handle.net/10084/120160
dc.description.abstractBackground: In this article, III-V semiconductors are proposed as materials for far-infrared and terahertz plasmonic applications. We suggest criteria to estimate appropriate spectral range for each material including tuning by fine doping and magnetic field. Methods: Several single-crystal wafer samples (n, p-doped GaAs, n-doped InP, and n, p-doped and undoped InSb) are characterized using reflectivity measurement and their optical properties are described using the Drude-Lorentz model, including magneto-optical anisotropy. Results: The optical parameters of III-V semiconductors are presented. Moreover, strong magnetic modulation of permittivity was demonstrated on the undoped InSb crystal wafer in the terahertz spectral range. Description of this effect is presented and the obtained parameters are compared with a Hall effect measurement. Conclusion: Analyzing the phonon/free carrier contribution to the permittivity of the samples shows their possible use as plasmonic materials; the surface plasmon properties of semiconductors in the THz range resemble those of noble metals in the visible and near infrared range and their properties are tunable by either doping or magnetic field.cs
dc.language.isoencs
dc.publisherEuropean Optical Societycs
dc.relation.ispartofseriesJournal of the European Optical Society-Rapid Publicationscs
dc.relation.urihttps://doi.org/10.1186/s41476-017-0044-xcs
dc.rights© The Author(s) 2017cs
dc.subjectsurface plasmonscs
dc.subjectsemiconductor materialscs
dc.subjectmagneto-optical materialscs
dc.subjectTHz-TDScs
dc.subjectFTIRcs
dc.titlePlasmonic behavior of III-V semiconductors in far-infrared and terahertz rangecs
dc.typearticlecs
dc.identifier.doi10.1186/s41476-017-0044-x
dc.rights.accessopenAccess
dc.type.versionpublishedVersioncs
dc.type.statusPeer-reviewedcs
dc.description.sourceWeb of Sciencecs
dc.description.volume13cs
dc.description.firstpageart. no. 13cs
dc.identifier.wos000406262900001


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