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dc.contributor.authorChochol, Jan
dc.contributor.authorPostava, Kamil
dc.contributor.authorČada, Michael
dc.contributor.authorPištora, Jaromír
dc.date.accessioned2017-11-03T05:58:22Z
dc.date.available2017-11-03T05:58:22Z
dc.date.issued2017
dc.identifier.citationScientific Reports. 2017, vol. 7, art. no. 13117.cs
dc.identifier.issn2045-2322
dc.identifier.urihttp://hdl.handle.net/10084/121133
dc.description.abstractWe experimentally demonstrate surface plasmon resonance (SPR) in the terahertz range in InSb and InAs. The surface plasmon is excited on the interface between a thin polymer film and the semiconductor using a silicon prism in Otto configuration. The low effective mass of InSb and InAs permits tuning of the SPR by an external magnetic field in the transversal configuration. The data show a good agreement with a model. Strong excitation of the surface plasmon is present in both materials, with a shifting of resonance position by more than 100 GHz for the field of 0.25 T, to both higher and lower energies with opposite orientation of the magnetic field. Applicability of the terahertz SPR sensor is discussed, along with modeled design for the Kretschmann configuration.cs
dc.format.extent2309933 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoencs
dc.publisherNPGcs
dc.relation.ispartofseriesScientific Reportscs
dc.relation.urihttps://doi.org/10.1038/s41598-017-13394-0cs
dc.rights© The Author(s) 2017
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/cs
dc.titleExperimental demonstration of magnetoplasmon polariton at InSb(InAs)/dielectric interface for terahertz sensor applicationcs
dc.typearticlecs
dc.identifier.doi10.1038/s41598-017-13394-0
dc.rights.accessopenAccess
dc.type.versionpublishedVersioncs
dc.type.statusPeer-reviewedcs
dc.description.sourceWeb of Sciencecs
dc.description.volume7cs
dc.description.firstpageart. no. 13117cs
dc.identifier.wos000412956900007


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Zobrazit minimální záznam

© The Author(s) 2017
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