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dc.contributor.authorRakús, Matej
dc.contributor.authorStopjaková, Viera
dc.contributor.authorArbet, Daniel
dc.date.accessioned2018-10-24T06:46:09Z
dc.date.available2018-10-24T06:46:09Z
dc.date.issued2018
dc.identifier.citationAdvances in electrical and electronic engineering. 2018, vol. 16, no. 2, p. 226-232 : ill.cs
dc.identifier.issn1336-1376
dc.identifier.issn1804-3119
dc.identifier.urihttp://hdl.handle.net/10084/132778
dc.description.abstractIn this paper, an analysis of basic Current Mirror (CM) topologies was performed with a focus on comparison of conventional realization to Bulk-Driven (BD) and Dynamic-Threshold (DT) equivalents, in terms of main properties. These circuits were designed in 130 nm CMOS technology using the supply voltage of 0.6 V and laid out on a test-chip. Fabricated circuits were analyzed and their characteristics compared to the simulation results. The achieved results prove that these unconventional circuit design techniques are quite promising for contemporary ultra low-voltage analog Integrated Circuits (ICs)cs
dc.format.extent4166169 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoencs
dc.publisherVysoká škola báňská - Technická univerzita Ostravacs
dc.relation.ispartofseriesAdvances in electrical and electronic engineeringcs
dc.relation.urihttp://dx.doi.org/10.15598/aeee.v16i2.27cs
dc.rights© Vysoká škola báňská - Technická univerzita Ostrava
dc.rightsAttribution-NoDerivatives 4.0 International*
dc.rights.urihttp://creativecommons.org/licenses/by-nd/4.0/*
dc.subjectanalog circuitscs
dc.subjectbulk-drivencs
dc.subjectcurrent mirrorscs
dc.subjectdynamic-thresholdcs
dc.subjectlow-voltage circuitscs
dc.titleAnalysis of BD MOS and DT MOS current mirrors in 130 nm CMOS technologycs
dc.typearticlecs
dc.identifier.doi10.15598/aeee.v16i2.27
dc.rights.accessopenAccesscs
dc.type.versionpublishedVersioncs
dc.type.statusPeer-reviewedcs


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