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dc.contributor.authorMilitzer, Matthias
dc.contributor.authorFreundlich, Pavel
dc.contributor.authorBizzotto, D.
dc.date.accessioned2006-10-17T08:57:24Z
dc.date.available2006-10-17T08:57:24Z
dc.date.issued2004
dc.identifier.citationRecrystallization and grain growth : 2nd Joint International Conference on Recrystallization and Grain Growth, ReX & GG2, SF2M , 30 Aug.-3 Sept. 2004, Annecy, France. Proceedings. 2004, p. 1339-1344. Materials science forum, vols. 467-470, pt. 2.en
dc.identifier.isbn0-87849-952-0
dc.identifier.issn0255-5476
dc.identifier.urihttp://hdl.handle.net/10084/57160
dc.description.abstractCu interconnects are essential in advanced integrated circuits to minimize the RC delay. In manufacturing these devices, Cu is deposited electrochemically using a plating bath containing organic additives. The as-deposited nanocrystalline Cu films undergo self-annealing at room temperature to form a micronsized grain structure by abnormal grain growth. Systematic experimental studies of self-annealing kinetics on model Cu films deposited on a Au substrate suggest that the rate of grain size evolution depends primarily on the initial grain size of the as-deposited film. A model for the observed abnormal grain growth process is proposed. Assuming that desorption of the organic additives leads to mobile grain boundaries, the onset of abnormal grain growth is attributed to a sufficiently low additive concentration such that a full coverage of all grain boundaries cannot be maintained. The incubation time of abnormal growth is then a logarithmic function of the initial grain size. The probability to find a growing grain is proportional to the number of grains per unit volume. This assumption is seen to be in good agreement with the experimental observations for subsequent abnormal grain growth rates. The limitations of the proposed model and the challenges to obtain further insight into the complex microstructure mechanisms during self-annealing are delineated.en
dc.language.isoenen
dc.publisherTrans Tech Publicationsen
dc.relation.ispartofseriesRecrystallization and grain growth : 2nd Joint International Conference on Recrystallization and Grain Growth, ReX & GG2, SF2M , 30 Aug.-3 Sept. 2004, Annecy, France. Proceedingsen
dc.subjectCu interconnectsen
dc.subjectCu interconnectsen
dc.subjectorganic additivesen
dc.subjectabnormal grain growthen
dc.titleAbnormal grain growth in electrochemically deposited Cu filmsen
dc.typearticleen
dc.identifier.locationNení ve fondu ÚKen
dc.identifier.wos000225119800209


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  • Publikační činnost VŠB-TUO / Publications of VŠB-TUO [2628]
    Kolekce obsahuje bibliografické záznamy publikační činnosti (článků) akademických pracovníků VŠB-TUO v časopisech (a v Lecture Notes in Computer Science) registrovaných ve Web of Science od roku 1990 po současnost.

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