Abnormal grain growth in electrochemically deposited Cu films

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dc.contributor.author Militzer, Matthias
dc.contributor.author Freundlich, Pavel
dc.contributor.author Bizzotto, D.
dc.date.accessioned 2006-10-17T08:57:24Z
dc.date.available 2006-10-17T08:57:24Z
dc.date.issued 2004
dc.identifier.citation Recrystallization and grain growth : 2nd Joint International Conference on Recrystallization and Grain Growth, ReX & GG2, SF2M , 30 Aug.-3 Sept. 2004, Annecy, France. Proceedings. 2004, p. 1339-1344. Materials science forum, vols. 467-470, pt. 2. en
dc.identifier.isbn 0-87849-952-0
dc.identifier.issn 0255-5476
dc.identifier.uri http://hdl.handle.net/10084/57160
dc.description.abstract Cu interconnects are essential in advanced integrated circuits to minimize the RC delay. In manufacturing these devices, Cu is deposited electrochemically using a plating bath containing organic additives. The as-deposited nanocrystalline Cu films undergo self-annealing at room temperature to form a micronsized grain structure by abnormal grain growth. Systematic experimental studies of self-annealing kinetics on model Cu films deposited on a Au substrate suggest that the rate of grain size evolution depends primarily on the initial grain size of the as-deposited film. A model for the observed abnormal grain growth process is proposed. Assuming that desorption of the organic additives leads to mobile grain boundaries, the onset of abnormal grain growth is attributed to a sufficiently low additive concentration such that a full coverage of all grain boundaries cannot be maintained. The incubation time of abnormal growth is then a logarithmic function of the initial grain size. The probability to find a growing grain is proportional to the number of grains per unit volume. This assumption is seen to be in good agreement with the experimental observations for subsequent abnormal grain growth rates. The limitations of the proposed model and the challenges to obtain further insight into the complex microstructure mechanisms during self-annealing are delineated. en
dc.language.iso en en
dc.publisher Trans Tech Publications en
dc.relation.ispartofseries Recrystallization and grain growth : 2nd Joint International Conference on Recrystallization and Grain Growth, ReX & GG2, SF2M , 30 Aug.-3 Sept. 2004, Annecy, France. Proceedings en
dc.subject Cu interconnects en
dc.subject Cu interconnects en
dc.subject organic additives en
dc.subject abnormal grain growth en
dc.title Abnormal grain growth in electrochemically deposited Cu films en
dc.type Article en
dc.identifier.location Není ve fondu ÚK en
dc.identifier.wos 000225119800209

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  • Publikační činnost VŠB-TUO / Publications of VŠB-TUO [1876]
    Kolekce obsahuje bibliografické záznamy publikační činnosti (článků) akademických pracovníků VŠB-TUO v časopisech (a v Lecture Notes in Computer Science) registrovaných ve Web of Science od roku 1990 po současnost.

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