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dc.contributor.authorPostava, Kamil
dc.contributor.authorBobo, J. F.
dc.contributor.authorOrtega, M. D.
dc.contributor.authorRaquet, B.
dc.contributor.authorJaffres, H.
dc.contributor.authorSnoeck, E.
dc.contributor.authorGoiran, M.
dc.contributor.authorFert, A. R.
dc.contributor.authorRedoulés, J. P.
dc.contributor.authorPištora, Jaromír
dc.contributor.authorOusset, J. C.
dc.date.accessioned2007-09-12T07:48:07Z
dc.date.available2007-09-12T07:48:07Z
dc.date.issued1996
dc.identifier.citationJournal of Magnetism and Magnetic Materials. 1996, vol. 163, issues 1-2, p. 8-20.en
dc.identifier.issn0304-8853
dc.identifier.urihttp://hdl.handle.net/10084/62703
dc.language.isoNeuvedenoen
dc.publisherNorth-Hollanden
dc.relation.ispartofseriesJournal of Magnetism and Magnetic Materialsen
dc.relation.urihttp://dx.doi.org/10.1016/S0304-8853(96)00292-2en
dc.subjectmagneto-opticsen
dc.subjectsputteringen
dc.subjectthin filmen
dc.subjectthin filmsen
dc.subjectironen
dc.subjectanisotropyen
dc.subjectkerr effecten
dc.subjectmagnetization reversalen
dc.titleMagneto-optical measurements of magnetization reversal in nanometer scale sputtered Fe thin filmsen
dc.typearticleen
dc.identifier.locationNení ve fondu ÚKen
dc.description.abstract-enWe present a magneto-optical study of the magnetic behavior of sputtered iron films of various thickness ranging from 2 to 50 nm grown on a silicon substrate. First we calculate the reflection coefficients in the case of an homogeneous magneto-optical layer with in-plane magnetization. Then we describe a technique in which both in-plane magnetization components are detected. Because of the axial deposition procedure, iron films exhibit in-plane uniaxial anisotropy depending on the thickness of the layer. In particular, we show that, for 4 nm thickness, anisotropy induced by slightly tilted columnar growth can be observed, whereas for larger thicknesses this in-plane anisotropy vanishes. Using an accurate acquisition system based upon a rapid analog-to-digital converter we measured the rapid magnetization reversal. The field sweep rate was varied between 100 Oe/s and l MOe/s. We interpret the observed dynamical effects in terms of wall movement and microdomain reversal.en
dc.identifier.doi10.1016/S0304-8853(96)00292-2
dc.identifier.wosA1996VW28900003


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