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dc.contributor.authorPostava, Kamil
dc.contributor.authorSueki, H.
dc.contributor.authorAoyama, Mitsuru
dc.contributor.authorYamaguchi, Tomuo
dc.contributor.authorMurakami, K.
dc.contributor.authorIgasaki, Y.
dc.identifier.citationApplied surface science. 2001, vols. 175-176, p. 543-548.en
dc.relation.ispartofseriesApplied surface scienceen
dc.subjectspectroscopic ellipsometryen
dc.subjectsurface roughnessen
dc.titleDoping effects on optical properties of epitaxial ZnO layers determined by spectroscopic ellipsometryen
dc.identifier.locationNení ve fondu ÚKen
dc.description.abstract-enOptical properties of Al- and Ga-doped ZnO layers have been studied in the spectral range from 1.5 to 5.4 eV using a four-zone null spectroscopic ellipsometer and in the spectral range from 0.5 to 6.5 eV using near-normal incidence reflectivity measurements. The layers were prepared by RF magnetron sputtering onto (1 1 0) oriented single-crystal sapphire substrates. Al- and Ga-doping gives rise to a shift of the fundamental absorption edge from 3.4 to 3.7 eV. The model dielectric function (MDF) based on an excitonic structure derived by Tanguy [Phys. Rev. B 60 (1999) 10660] was completed by the Sellmeier and Drude terms. The Drude term describes a free-electron contribution originating from presence of the dopant. Spectroscopic ellipsometry and reflectometry are very sensitive to a surface roughness. The surface roughness was modeled by a surface layer of the Bruggeman effective medium and by diffraction theory.en

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  • Publikační činnost VŠB-TUO / Publications of VŠB-TUO [2684]
    Kolekce obsahuje bibliografické záznamy publikační činnosti (článků) akademických pracovníků VŠB-TUO v časopisech (a v Lecture Notes in Computer Science) registrovaných ve Web of Science od roku 1990 po současnost.

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