| dc.contributor.author |
Postava, Kamil |
|
| dc.contributor.author |
Sueki, H. |
|
| dc.contributor.author |
Aoyama, Mitsuru |
|
| dc.contributor.author |
Yamaguchi, Tomuo |
|
| dc.contributor.author |
Murakami, K. |
|
| dc.contributor.author |
Igasaki, Y. |
|
| dc.date.accessioned |
2007-07-02T09:10:32Z |
|
| dc.date.available |
2007-07-02T09:10:32Z |
|
| dc.date.issued |
2001 |
|
| dc.identifier.citation |
Applied surface science. 2001, vols. 175-176, p. 543-548. |
en |
| dc.identifier.issn |
0169-4332 |
|
| dc.identifier.uri |
http://hdl.handle.net/10084/60828 |
|
| dc.language.iso |
en |
en |
| dc.publisher |
North-Holland |
en |
| dc.relation.ispartofseries |
Applied surface science |
en |
| dc.relation.uri |
http://dx.doi.org/10.1016/S0169-4332(01)00145-3 |
en |
| dc.subject |
ZnO |
en |
| dc.subject |
spectroscopic ellipsometry |
en |
| dc.subject |
reflectivity |
en |
| dc.subject |
surface roughness |
en |
| dc.title |
Doping effects on optical properties of epitaxial ZnO layers determined by spectroscopic ellipsometry |
en |
| dc.type |
Article |
en |
| dc.identifier.location |
Není ve fondu ÚK |
en |
| dc.description.abstract-en |
Optical properties of Al- and Ga-doped ZnO layers have been studied in the spectral range from 1.5 to 5.4 eV using a four-zone null spectroscopic ellipsometer and in the spectral range from 0.5 to 6.5 eV using near-normal incidence reflectivity measurements. The layers were prepared by RF magnetron sputtering onto (1 1 0) oriented single-crystal sapphire substrates. Al- and Ga-doping gives rise to a shift of the fundamental absorption edge from 3.4 to 3.7 eV. The model dielectric function (MDF) based on an excitonic structure derived by Tanguy [Phys. Rev. B 60 (1999) 10660] was completed by the Sellmeier and Drude terms. The Drude term describes a free-electron contribution originating from presence of the dopant. Spectroscopic ellipsometry and reflectometry are very sensitive to a surface roughness. The surface roughness was modeled by a surface layer of the Bruggeman effective medium and by diffraction theory. |
en |
| dc.identifier.doi |
10.1016/S0169-4332(01)00145-3 |
|
| dc.identifier.wos |
000169032100090 |
|