Doping effects on optical properties of epitaxial ZnO layers determined by spectroscopic ellipsometry

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Show simple item record Postava, Kamil Sueki, H. Aoyama, Mitsuru Yamaguchi, Tomuo Murakami, K. Igasaki, Y. 2007-07-02T09:10:32Z 2007-07-02T09:10:32Z 2001
dc.identifier.citation Applied surface science. 2001, vols. 175-176, p. 543-548. en
dc.identifier.issn 0169-4332
dc.language.iso en en
dc.publisher North-Holland en
dc.relation.ispartofseries Applied surface science en
dc.relation.uri en
dc.subject ZnO en
dc.subject spectroscopic ellipsometry en
dc.subject reflectivity en
dc.subject surface roughness en
dc.title Doping effects on optical properties of epitaxial ZnO layers determined by spectroscopic ellipsometry en
dc.type article en
dc.identifier.location Není ve fondu ÚK en
dc.description.abstract-en Optical properties of Al- and Ga-doped ZnO layers have been studied in the spectral range from 1.5 to 5.4 eV using a four-zone null spectroscopic ellipsometer and in the spectral range from 0.5 to 6.5 eV using near-normal incidence reflectivity measurements. The layers were prepared by RF magnetron sputtering onto (1 1 0) oriented single-crystal sapphire substrates. Al- and Ga-doping gives rise to a shift of the fundamental absorption edge from 3.4 to 3.7 eV. The model dielectric function (MDF) based on an excitonic structure derived by Tanguy [Phys. Rev. B 60 (1999) 10660] was completed by the Sellmeier and Drude terms. The Drude term describes a free-electron contribution originating from presence of the dopant. Spectroscopic ellipsometry and reflectometry are very sensitive to a surface roughness. The surface roughness was modeled by a surface layer of the Bruggeman effective medium and by diffraction theory. en
dc.identifier.doi 10.1016/S0169-4332(01)00145-3
dc.identifier.wos 000169032100090

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  • Publikační činnost VŠB-TUO / Publications of VŠB-TUO [2612]
    Kolekce obsahuje bibliografické záznamy publikační činnosti (článků) akademických pracovníků VŠB-TUO v časopisech (a v Lecture Notes in Computer Science) registrovaných ve Web of Science od roku 1990 po současnost.

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