Show simple item record

dc.contributor.authorPostava, Kamil
dc.contributor.authorSueki, H.
dc.contributor.authorAoyama, Mitsuru
dc.contributor.authorYamaguchi, Tomuo
dc.contributor.authorMurakami, K.
dc.contributor.authorIgasaki, Y.
dc.identifier.citationApplied surface science. 2001, vols. 175-176, p. 543-548.en
dc.relation.ispartofseriesApplied surface scienceen
dc.subjectspectroscopic ellipsometryen
dc.subjectsurface roughnessen
dc.titleDoping effects on optical properties of epitaxial ZnO layers determined by spectroscopic ellipsometryen
dc.identifier.locationNení ve fondu ÚKen
dc.description.abstract-enOptical properties of Al- and Ga-doped ZnO layers have been studied in the spectral range from 1.5 to 5.4 eV using a four-zone null spectroscopic ellipsometer and in the spectral range from 0.5 to 6.5 eV using near-normal incidence reflectivity measurements. The layers were prepared by RF magnetron sputtering onto (1 1 0) oriented single-crystal sapphire substrates. Al- and Ga-doping gives rise to a shift of the fundamental absorption edge from 3.4 to 3.7 eV. The model dielectric function (MDF) based on an excitonic structure derived by Tanguy [Phys. Rev. B 60 (1999) 10660] was completed by the Sellmeier and Drude terms. The Drude term describes a free-electron contribution originating from presence of the dopant. Spectroscopic ellipsometry and reflectometry are very sensitive to a surface roughness. The surface roughness was modeled by a surface layer of the Bruggeman effective medium and by diffraction theory.en

Files in this item


There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record