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dc.contributor.authorFoldyna, Martin
dc.contributor.authorDe Martino, Antonello
dc.contributor.authorGarcia-Caurel, Enric
dc.contributor.authorOssikovski, Razvigor
dc.contributor.authorBertin, François
dc.contributor.authorHazart, Jérôme
dc.contributor.authorPostava, Kamil
dc.contributor.authorDrevillon, Bernard
dc.date.accessioned2008-06-03T10:01:23Z
dc.date.available2008-06-03T10:01:23Z
dc.date.issued2008
dc.identifier.citationPhysica status solidi. A, Applications and materials science. 2008, vol. 205, issue 4, p. 806-809.en
dc.identifier.issn0031-8965
dc.identifier.issn1521-396X
dc.identifier.urihttp://hdl.handle.net/10084/65087
dc.description.abstractIn this work we characterized two bidimensional gratings consisting each of a square array of square holes etched in a photoresist layer deposited on silicon. Data were taken on both samples with a spectroscopic UV-VIS ellipsometer (SE) operated at 70° incidence and zero azimuth (with the incidence plane parallel to the lines of holes) and a VIS Mueller matrix polarimeter (MMP) at various incidence and azimuthal angles. The robustness of the parameters derived from the MMP data was evaluated from the stability of the values provided by regression the spectra taken at different angles. The optimal measurement geometries, featuring high sensitivity and low correlation of the fitting parameters, were determined theoretically, and validated experimentally with the sample featuring wider holes (500 × 500 nm), for which 45° incidence provided better results than the usual 70° value.en
dc.language.isoenen
dc.publisherWiley-VCHen
dc.relation.ispartofseriesPhysica status solidi. A, Applications and materials scienceen
dc.relation.urihttp://dx.doi.org/10.1002/pssa.200777808en
dc.titleMonitoring critical dimensions of bidimensional gratings by spectroscopic ellipsometry and Mueller polarimetryen
dc.typearticleen
dc.identifier.locationNení ve fondu ÚKen
dc.identifier.doi10.1002/pssa.200777808
dc.identifier.wos000255702600021


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