Influence of magnetic field on electric charge trasport in Holmium thin film at low temperature

Abstract

High precision electrical resistance measurements were performed in the low temperature range from 4.2 K up to room temperature on a holmium bulk sample, and on holmium thin films in magnetic field. The X-ray diffraction of Ho films confirmed their preferential crystal orientation and revealed diffraction peaks originating from the h.c.p. structure of Ho and those from inessential holmium dihydrid content. The TN value of these films decreased with decreasing film thickness. Magnetic field applied parallel to the thin film plane caused an increasing suppression of the TN value up to 5 K with increasing flux density value up to 5 T.