Preparation of silicon nanoparticular nanocomposite with thin interparticular tin matrix

Abstract

Technology of a composite material of silicon nano-particles (99.999 w% for semiconductors) arranged densely in a metal tin matrix (99.7 w%) is presented in the present paper. The main motivation for the technology development is an endeavor to prepare a nano-composite material in which semiconductor particles are crowded densely by applying high pressure in a metal matrix. In the above arrangement, a coexistence of very narrow mesh nanostructure of a tin matrix with dispersed nanoparicles of silicon is involved. With the high level of volume density of nanoparticles, the surface interface between metal and semiconductor attains an extraordinarily large size. Thanks to this fact, a significant enhancement of the volume rate of the transitional Shottky's zone between metal tin and semiconductive silicon has been reached. Based on preliminary measurements, the abovementioned structure is characterized by an active influence on material behavior in the area of temperature dependence of resistivity which cannot be explained by mere superposition of parallel currents in two independent components: silicon and tin.