Prohlížení dle autora "Breza, J."
-
Properties of the Si-SiO2 interfaces in MOS structures with nitrogen doped silicon
Harmatha, L.; Ballo, P.; Breza, J.; Písečný, P.; Ťapajna, M. (Advances in electrical and electronic engineering. 2006, vol. 5, no. 3, p. 334-336.) -
Simulation of electrical parameters for Ru/Ta2O5/SiO2/Si(p) high-k MOS structure
Racko, J.; Harmatha, L.; Breza, J.; Benko, P.; Donoval, D. (Advances in electrical and electronic engineering. 2008, vol. 7, no. 1, 2, p. 385-388.)