Prohlížení dle autora "Donoval, D."
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Simulation of electrical parameters for Ru/Ta2O5/SiO2/Si(p) high-k MOS structure
Racko, J.; Harmatha, L.; Breza, J.; Benko, P.; Donoval, D. (Advances in electrical and electronic engineering. 2008, vol. 7, no. 1, 2, p. 385-388.)