Prohlížení dle autora "Písečný, P."
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Properties of the Si-SiO2 interfaces in MOS structures with nitrogen doped silicon
Harmatha, L.; Ballo, P.; Breza, J.; Písečný, P.; Ťapajna, M. (Advances in electrical and electronic engineering. 2006, vol. 5, no. 3, p. 334-336.)