| dc.contributor.author | Postava, Kamil | |
| dc.contributor.author | Sueki, H. | |
| dc.contributor.author | Aoyama, Mitsuru | |
| dc.contributor.author | Yamaguchi, Tomuo | |
| dc.contributor.author | Murakami, K. | |
| dc.contributor.author | Igasaki, Y. | |
| dc.date.accessioned | 2007-07-02T09:10:32Z | |
| dc.date.available | 2007-07-02T09:10:32Z | |
| dc.date.issued | 2001 | |
| dc.identifier.citation | Applied Surface Science. 2001, vols. 175-176, p. 543-548. | en |
| dc.identifier.issn | 0169-4332 | |
| dc.identifier.uri | http://hdl.handle.net/10084/60828 | |
| dc.language.iso | en | en |
| dc.publisher | North-Holland | en |
| dc.relation.ispartofseries | Applied Surface Science | en |
| dc.relation.uri | http://dx.doi.org/10.1016/S0169-4332(01)00145-3 | en |
| dc.subject | ZnO | en |
| dc.subject | spectroscopic ellipsometry | en |
| dc.subject | reflectivity | en |
| dc.subject | surface roughness | en |
| dc.title | Doping effects on optical properties of epitaxial ZnO layers determined by spectroscopic ellipsometry | en |
| dc.type | article | en |
| dc.identifier.location | Není ve fondu ÚK | en |
| dc.description.abstract-en | Optical properties of Al- and Ga-doped ZnO layers have been studied in the spectral range from 1.5 to 5.4 eV using a four-zone null spectroscopic ellipsometer and in the spectral range from 0.5 to 6.5 eV using near-normal incidence reflectivity measurements. The layers were prepared by RF magnetron sputtering onto (1 1 0) oriented single-crystal sapphire substrates. Al- and Ga-doping gives rise to a shift of the fundamental absorption edge from 3.4 to 3.7 eV. The model dielectric function (MDF) based on an excitonic structure derived by Tanguy [Phys. Rev. B 60 (1999) 10660] was completed by the Sellmeier and Drude terms. The Drude term describes a free-electron contribution originating from presence of the dopant. Spectroscopic ellipsometry and reflectometry are very sensitive to a surface roughness. The surface roughness was modeled by a surface layer of the Bruggeman effective medium and by diffraction theory. | en |
| dc.identifier.doi | 10.1016/S0169-4332(01)00145-3 | |
| dc.identifier.wos | 000169032100090 | |