| dc.contributor.author | Dubec, Miroslav | |
| dc.contributor.author | Brotzen, Franz R. | |
| dc.contributor.author | Dunn, Robert C. | |
| dc.date.accessioned | 2007-08-09T12:15:08Z | |
| dc.date.available | 2007-08-09T12:15:08Z | |
| dc.date.issued | 1999 | |
| dc.identifier.citation | Journal of Applied Physics. 1999, vol. 85, issue 10, p. 7477-7479. | en |
| dc.identifier.issn | 0021-8979 | |
| dc.identifier.issn | 1089-7550 | |
| dc.identifier.uri | http://hdl.handle.net/10084/61665 | |
| dc.language.iso | en | en |
| dc.publisher | American Institute of Physics | en |
| dc.relation.ispartofseries | Journal of Applied Physics | en |
| dc.relation.uri | http://dx.doi.org/10.1063/1.369382 | en |
| dc.title | Electrostatic adhesion testing of thin metallic layers | en |
| dc.type | article | en |
| dc.identifier.location | Není ve fondu ÚK | en |
| dc.description.abstract-en | Testing of the adhesion strength of various metallizations on Si was carried out by a novel electrostatic technique. This technique made possible the evaluation of the characteristic adhesion stress and of the Weibull modulus, the latter being a measure of the distribution of weak adhesion spots. Adhesion characteristics of various metallic films (Cu, Ti–W, Al–Cu) were determined, and the effect of substrate treatments on these characteristics was analyzed. | en |
| dc.identifier.doi | 10.1063/1.369382 | |
| dc.identifier.wos | 000080136000072 | |