dc.contributor.author | Pápeš, Martin | |
dc.contributor.author | Cheben, Pavel | |
dc.contributor.author | Benedikovič, Daniel | |
dc.contributor.author | Schmid, Jens H. | |
dc.contributor.author | Pond, James | |
dc.contributor.author | Halir, Robert | |
dc.contributor.author | Ortega-Moñux, Alejandro | |
dc.contributor.author | Wangueemert-Pérez, Gonzalo | |
dc.contributor.author | Ye, Winnie N. | |
dc.contributor.author | Xu, Dan-Xia | |
dc.contributor.author | Janz, Siegfried | |
dc.contributor.author | Dado, Milan | |
dc.contributor.author | Vašinek, Vladimír | |
dc.date.accessioned | 2016-04-06T12:17:47Z | |
dc.date.available | 2016-04-06T12:17:47Z | |
dc.date.issued | 2016 | |
dc.identifier.citation | Optics Express. 2016, vol. 24, issue 5, p. 5026-5038. | cs |
dc.identifier.issn | 1094-4087 | |
dc.identifier.uri | http://hdl.handle.net/10084/111443 | |
dc.description.abstract | Fiber-chip edge couplers are extensively used in integrated optics
for coupling of light between planar waveguide circuits and optical fibers.
In this work, we report on a new fiber-chip edge coupler concept with large
mode size for silicon photonic wire waveguides. The coupler allows direct
coupling with conventional cleaved optical fibers with large mode size
while circumventing the need for lensed fibers. The coupler is designed for
220 nm silicon-on-insulator (SOI) platform. It exhibits an overall coupling
efficiency exceeding 90%, as independently confirmed by 3D FiniteDifference
Time-Domain (FDTD) and fully vectorial 3D Eigenmode
Expansion (EME) calculations. We present two specific coupler designs,
namely for a high numerical aperture single mode optical fiber with 6 µm
mode field diameter (MFD) and a standard SMF-28 fiber with 10.4 µm
MFD. An important advantage of our coupler concept is the ability to
expand the mode at the chip edge without leading to high substrate leakage
losses through buried oxide (BOX), which in our design is set to 3 µm. This
remarkable feature is achieved by implementing in the SiO2 upper cladding
thin high-index Si3N4 layers. The Si3N4 layers increase the effective
refractive index of the upper cladding near the facet. The index is controlled
along the taper by subwavelength refractive index engineering to facilitate
adiabatic mode transformation to the silicon wire waveguide while the Siwire
waveguide is inversely tapered along the coupler. The mode overlap
optimization at the chip facet is carried out with a full vectorial mode
solver. The mode transformation along the coupler is studied using 3DFDTD
simulations and with fully-vectorial 3D-EME calculations. The
couplers are optimized for operating with transverse electric (TE)
polarization and the operating wavelength is centered at 1.55 µm. | cs |
dc.format.extent | 2056840 bytes | |
dc.format.mimetype | application/pdf | |
dc.language.iso | en | cs |
dc.publisher | Optical Society of America | cs |
dc.relation.ispartofseries | Optics Express | cs |
dc.relation.uri | http://dx.doi.org/10.1364/OE.24.005026 | cs |
dc.rights | ©2016 Optical Society of America | cs |
dc.title | Fiber-chip edge coupler with large mode size for silicon photonic wire waveguides | cs |
dc.type | article | cs |
dc.identifier.doi | 10.1364/OE.24.005026 | |
dc.rights.access | openAccess | |
dc.type.version | publishedVersion | cs |
dc.type.status | Peer-reviewed | cs |
dc.description.source | Web of Science | cs |
dc.description.volume | 24 | cs |
dc.description.issue | 5 | cs |
dc.description.lastpage | 5038 | cs |
dc.description.firstpage | 5026 | cs |
dc.identifier.wos | 000371435000069 | |