Zobrazit minimální záznam

dc.contributor.authorBlažek, Dalibor
dc.contributor.authorPištora, Jaromír
dc.contributor.authorČada, Michael
dc.date.accessioned2016-12-07T13:06:56Z
dc.date.available2016-12-07T13:06:56Z
dc.date.issued2016
dc.identifier.citationJournal of Nanoscience and Nanotechnology. 2016, vol. 16, no. 8, p. 7797-7800.cs
dc.identifier.issn1533-4880
dc.identifier.issn1533-4899
dc.identifier.urihttp://hdl.handle.net/10084/116505
dc.description.abstractThe plasmonic properties of semiconductors, transparent conductive oxides, transition metal nitrides, noble metals and aluminium are discussed in this article. It is shown that for each frequency in the wide range of 1 meV up to 15 eV the material with appropriate plasmonic properties can be chosen. Special attention is devoted to the semiconductors due to their tunability, extremely low effective masses and exceptionally high carrier mobility that allows to creation of plasmonic structures operating in the terahertz region.cs
dc.language.isoencs
dc.publisherAmerican Scientific Publisherscs
dc.relation.ispartofseriesJournal of Nanoscience and Nanotechnologycs
dc.relation.urihttp://dx.doi.org/10.1166/jnn.2016.12549cs
dc.subjectplasmonic materialscs
dc.subjectplasmonicscs
dc.subjectsemiconductorscs
dc.subjectsurface plasmon resonancecs
dc.subjectterahertz frequency bandcs
dc.titleSemiconductors for nanoplasmonicscs
dc.typearticlecs
dc.identifier.doi10.1166/jnn.2016.12549
dc.type.statusPeer-reviewedcs
dc.description.sourceWeb of Sciencecs
dc.description.volume16cs
dc.description.issue8cs
dc.description.lastpage7800cs
dc.description.firstpage7797cs
dc.identifier.wos000387083900005


Soubory tohoto záznamu

SouboryVelikostFormátZobrazit

K tomuto záznamu nejsou připojeny žádné soubory.

Tento záznam se objevuje v následujících kolekcích

Zobrazit minimální záznam