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dc.contributor.authorTariq, Muhammad
dc.contributor.authorLi, Ying
dc.contributor.authorLi, Wenxian
dc.contributor.authorYu, Zhongrui
dc.contributor.authorLi, Jiamei
dc.contributor.authorHu, Yemin
dc.contributor.authorZhu, Mingyuan
dc.contributor.authorJin, Hongming
dc.contributor.authorLi, Yibing
dc.contributor.authorSkotnicová, Kateřina
dc.date.accessioned2019-06-11T06:02:08Z
dc.date.available2019-06-11T06:02:08Z
dc.date.issued2019
dc.identifier.citationJournal of Materials Science - Materials in Electronics. 2019, vol. 30, issue 9, p. 8226-8232.cs
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.urihttp://hdl.handle.net/10084/135188
dc.description.abstractIn this study, Zn0.97Fe0.01Ni0.02O diluted magnetic semiconductor (DMS) flowers were fabricated through hydrothermal method with 4T (Tesla) pulsed magnetic field (PMF). Rietveld refinement of X-ray diffraction (XRD) patterns and Raman analysis indicated that the synthesized samples have the hexagonal wurtzite structure without any other secondary (impurity) phases. The O1s X-ray photoelectron spectroscopy (XPS) and Raman measurements of the synthesized samples showed the existence of oxygen vacancy (VO). The results indicated that PMF could increase the contents of VO and doped ions. The magnetic measurement showed that the room temperature ferromagnetic (RTFM) property of (Fe, Ni) co-doped ZnO is enhanced by PMF. The enhancement of RTFM is attributed to the intrinsic interaction of magnetic ions (Fe3+, Ni2+) via VO created by pulsed magnetic field processing.cs
dc.language.isoencs
dc.publisherSpringercs
dc.relation.ispartofseriesJournal of Materials Science - Materials in Electronicscs
dc.relation.urihttps://doi.org/10.1007/s10854-019-01138-xcs
dc.rights© Springer Science+Business Media, LLC, part of Springer Nature 2019cs
dc.titleEnhancement of ferromagnetic properties in (Fe, Ni) co-doped ZnO flowers by pulsed magnetic field processingcs
dc.typearticlecs
dc.identifier.doi10.1007/s10854-019-01138-x
dc.type.statusPeer-reviewedcs
dc.description.sourceWeb of Sciencecs
dc.description.volume30cs
dc.description.issue9cs
dc.description.lastpage8232cs
dc.description.firstpage8226cs
dc.identifier.wos000468050800012


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