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dc.contributor.authorLiu, Xiaocheng
dc.contributor.authorFecko, Peter
dc.contributor.authorFohlerová, Zdenka
dc.contributor.authorKarásek, Tomáš
dc.contributor.authorPekárek, Jan
dc.contributor.authorNeužil, Pavel
dc.date.accessioned2020-12-14T08:10:11Z
dc.date.available2020-12-14T08:10:11Z
dc.date.issued2020
dc.identifier.citationJournal of Vacuum Science & Technology B. 2020, vol. 38, issue 6, art. no. 063001.cs
dc.identifier.issn2166-2746
dc.identifier.issn2166-2754
dc.identifier.urihttp://hdl.handle.net/10084/142476
dc.description.abstractThe modification of surface properties frequently requires the binding of suitable compounds to the original surface. Silanes or thiols can be directly covalently bonded to either Si-based materials or Au, thus ruling out polymers. Here, we show the utilization of a layer of SiO(2)with a thickness of a few nanometers that serves as a cross-linker between polymers and silanes providing covalent bonding to the surface. We deposited a polymer onto a thermally oxidized microstructured Si surface followed by subsequent Si removal. We demonstrated a Si-based nanotechnology fabrication method that can be generally used to modify the surface properties of practically any polymer via SiO(2)cross-linking. This can produce any topology, including microstructures, nanostructures, or composite microstructure/nanostructures terminating in different shapes, since all the steps involving polymer deposition are conducted at room temperature after the Si surface has been thermally oxidized. This technique opens a broad field of new applications for polymers in microstructures and nanostructures that have stable water surface contact angle values with the contact angle set by demand for gecko-mimicking structures or lotus leaf inspired surfaces.cs
dc.language.isoencs
dc.publisherAIP Publishingcs
dc.relation.ispartofseriesJournal of Vacuum Science & Technology Bcs
dc.relation.urihttp://doi.org/10.1116/6.0000558cs
dc.rightsPublished under license by AVS.cs
dc.titleParylene micropillars coated with thermally grown SiO2cs
dc.typearticlecs
dc.identifier.doi10.1116/6.0000558
dc.type.statusPeer-reviewedcs
dc.description.sourceWeb of Sciencecs
dc.description.volume38cs
dc.description.issue6cs
dc.description.firstpageart. no. 063001cs
dc.identifier.wos000582126900001


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