| dc.contributor.author | Postava, Kamil | |
| dc.contributor.author | Sueki, H. | |
| dc.contributor.author | Aoyama, Mitsuru | |
| dc.contributor.author | Yamaguchi, Tomuo | |
| dc.contributor.author | Ino, Ch. | |
| dc.contributor.author | Igasaki, Y. | |
| dc.contributor.author | Horie, Masahiro | |
| dc.date.accessioned | 2007-06-29T13:26:12Z | |
| dc.date.available | 2007-06-29T13:26:12Z | |
| dc.date.issued | 2000 | |
| dc.identifier.citation | Journal of Applied Physics. 2000, vol. 87, issue 11, p. 7820-7824. | en |
| dc.identifier.issn | 0021-8979 | |
| dc.identifier.issn | 1089-7550 | |
| dc.identifier.uri | http://hdl.handle.net/10084/60825 | |
| dc.language.iso | en | en |
| dc.publisher | American Institute of Physics | en |
| dc.relation.ispartofseries | Journal of Applied Physics | en |
| dc.relation.uri | http://dx.doi.org/10.1063/1.373461 | en |
| dc.title | Spectroscopic ellipsometry of epitaxial ZnO layer on sapphire substrate | en |
| dc.type | article | en |
| dc.identifier.location | Není ve fondu ÚK | en |
| dc.description.abstract-en | Optical properties of epitaxial ZnO layers have been studied in the spectral region from 1.5 to 5.4 eV using four-zone null spectroscopic ellipsometry. An existing model dielectric function based on excitonic structure near direct band gap has been improved by including a high-energy absorption term. Surface layer, corresponding to the surface roughness, was found to be essential to fit the spectroellipsometric data obtained. Two kinds of samples have been studied: ZnO layers prepared on (0001) and (110)-oriented sapphire substrates. The surfaces of the first ones were found to be more rough. | en |
| dc.identifier.doi | 10.1063/1.373461 | |
| dc.identifier.wos | 000087067400033 | |