Zobrazit minimální záznam

dc.contributor.authorPostava, Kamil
dc.contributor.authorYamaguchi, Tomuo
dc.contributor.authorHorie, Masahiro
dc.date.accessioned2007-07-02T10:00:39Z
dc.date.available2007-07-02T10:00:39Z
dc.date.issued2001
dc.identifier.citationApplied Physics Letters. 2001, vol. 79, issue 14, p. 2231-2233.en
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.urihttp://hdl.handle.net/10084/60831
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.relation.ispartofseriesApplied Physics Lettersen
dc.relation.urihttp://dx.doi.org/10.1063/1.1408607en
dc.titleEstimation of the dielectric properties of low-k materials using optical spectroscopyen
dc.typearticleen
dc.identifier.locationNení ve fondu ÚKen
dc.description.abstract-enThe dielectric function spectra of low dielectric constant (low-k) materials have been determined using spectroscopic ellipsometry, near-normal incidence spectroscopic reflectometry, and Fourier transform infrared transmission spectrometry over a wide spectral range from 0.03 to 5.4 eV (230 nm to 40.5 µm wavelength region). The electronic and ionic contributions to the overall static dielectric constant were determined for representative materials used in the semiconductor industry for interlayer dielectrics: (1) FLARE—organic spin-on polymer, (2) HOSP—spin-on hybrid organic-siloxane polymer from the Honeywell Electronic Materials Company, and (3) SiLK—organic dielectric resin from the Dow Chemical Company. The main contributions to the static dielectric constant of the low-k materials studied were found to be the electronic and ionic absorptions.en
dc.identifier.doi10.1063/1.1408607
dc.identifier.wos000171134900036


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