Spin-polarized current in lateral nanostructures described by one-dimensional model.

Abstract

Lateral spin devices are an important concept in nowadays all-metallic spintronic devices. One of the key problems is to obtain large spin injection and detection efficiency. Several concepts has been envisaged, such as to use half-metallic ferromagnetic electrodes or spin-polarized interface barriers. Within this work, we suggest an alternative way of the optimization of spin devices (namely optimization of spin current density, spin current and spin accumulation), based on optimization of the geometry (dimensions) of the device, jointly with optimization of the interface resistance.