Počítačové modelování růstu monokrystalů SiC metodou PVT

Abstract

The diploma thesis is focused on simulations of SiC single crystals growth by PVT. The theoretical part of the thesis describes the following topics: silicon carbide SiC, formation of SiC polytypes, growth of SiC single crystals. The PVT sublimation method and the modelling of the PVT method are described in detail. Theories of PVT method simulations describe the basic physical principles that are applied in the growth of SiC single crystals in the STR VR-PVT SiC software. The practical part of the thesis deals with the calibrations of the models in the STR-VR PVT SiC software. The first chapter is devoted to the STR VR-PVT SiC software. The procedure for setting up the simulations is presented. The second chapter is devoted to calibrations of „standard“ and „optimized“ models, growth and simulations of single crystal and polycrystalline SiC in the process zone of the „DP“ model. Parameters affecting the crystal shape and powder models have been studied. In addition, the work deals with simulations of stresses in the crystals „standard“ and „optimized“. The polytypes on the grown SiC polycrystal were analyzed by Raman spectroscopy. Lastly, the SiC powders were analyzed.