Studium 3D-defektů po epitaxní depozici tenkých vrstev křemíku CVD metodou

Abstract

The bachelor thesis is devoted to the study of the production of silicon wafers, epitaxial growth of silicon films by chemical vapor deposition on silicon wafers, as a substrate, and subsequently resulting after-epitaxial 3D-defects called nodules. Using software planning experiment (JMP) were designed to the new parameters of the chemical deposition of minimizing the size or frequency of nodules on the unpolished side of the silicon wafer after the epitaxial growth.

Characterization of the frequency and size of nodules before and after the treatment process parameters epitaxial growth silicon layers was made using an optical microscope with differential interference contrast and scanning electron microscopy. This thesis was created with the support of ON Semiconductor Czech Republic, Rožnov pod Radhošťem.