Detekce zkratových proudů velmi rychlých výkonových spínacích součástek

Abstract

Modern power semiconductor devices based on silicon carbide display a number very favorable properties in particular in terms of dynamics, losses and thermal overload. This enables to increase the efficiency inverters and move boundary performance ratio/ bulk significantly better values. Due to improved parameters also occurs in comparison with standard silicon component materials to reduce the size and thus the amount of semiconductor material components. This a negative affects the size of the so-called diffused energy and therefore short-term overload especially in heavy and dynamically the generating faults. Work therefore deals with evaluation techniques rapidly arising overload SiC components including methods of rapid and, if possible, turn off the low-loss components at an early stage circuit. The paper describes a method monitoring the saturation voltage, method a current mirror, method of dynamic evaluation of the level of the fault current and these methods are the extent validated numerical models.