Vliv brusných kotoučů na parametry desek z karbidu křemíku
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Vysoká škola báňská – Technická univerzita Ostrava
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This bachelor thesis deals with the influence of grinding wheels on the geometrical parameters of silicon carbide wafers further intended for the production of semiconductor components. These effects are investigated by measuring hardness, evaluating surface roughness and using optical and electron microscopy techniques on grinding teeth and SiC plate samples. In addition, processed production data provided by ON Semiconductor Czech Republic, s.r.o., whose experts were consulted for this work, are included. The results of the bachelor thesis point out the necessity of an individual approach to Si-faces and C-faces of SiC wafers from the point of view of mechanical grinding. The results also point out the influence of large pores in the grinding teeth on the resulting plate surface.
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Silicon carbide (SiC), grinding, SiC wafers parameters, production of SiC, grinding wheels