Počítačové modelování růstu monokrystalů křemíku metodou Czochralskiho v magnetickém poli

Abstract

This diploma thesis deals with computer modeling of the growth of single crystal silicon by Czochralski method in a magnetic field which is utilized by ON Semiconductor Czech Republic. The theoretical part is focused on general description of silicon, its basic characteristics and attributes needed for the semiconductor industry. Below are also appointed technological processes leading to the formation of single crystal silicon and the use of magnetic fields to optimize the process. A computer software was used to investigate the influence of magnetic field on the final product. The practical part provides a view of the comparison of the results of simulation software and real results obtained from experimentally produced crystals.