Spectroscopic ellipsometry of carbon nanotube formation in SiC surface decomposition

Show simple item record
dc.contributor.authorMatsumoto, Koichi
dc.contributor.authorMaeda, Hiroshi
dc.contributor.authorKawaguchi, Y.
dc.contributor.authorTakahashi, Katsumi
dc.contributor.authorAoyama, Mitsuru
dc.contributor.authorYamaguchi, Tomuo
dc.contributor.authorPostava, Kamil
dc.date.accessioned2006-10-06T12:50:54Z
dc.date.available2006-10-06T12:50:54Z
dc.date.issued2004
dc.description.abstractWe have studied the initial stage of formation of carbon nanotube layers in surface decomposition of SiC substrate by means of spectroscopic ellipsometry. Before heating, the surface of the SiC substrate was covered with an SiO2 layer that had been formed by natural oxidation. By heating up to 1100 °C, reduction of SiO2 layer occurs. Between 1150 and 1300 °C, the surface of SiC decomposes and a (graphite+void) layer is formed on the surface. Then, by heating at 1300 °C for longer time, a carbon nanotube layer is formed. As a result, we have detected the beginning of the surface decomposition at 1150 °C and the beginning of the formation of a carbon nanotube layer at 1300 °C.en
dc.identifier.citationThin Solid Films. 2004, vol. 455-456, p. 339-343.en
dc.identifier.doi10.1016/j.tsf.2003.11.200
dc.identifier.issn0040-6090
dc.identifier.locationNení ve fondu ÚKen
dc.identifier.urihttp://hdl.handle.net/10084/56917
dc.identifier.wos000221690000059
dc.language.isoenen
dc.publisherElsevieren
dc.relation.ispartofseriesThin Solid Filmsen
dc.relation.urihttp://dx.doi.org/10.1016/j.tsf.2003.11.200en
dc.subjectcarbon nanotubeen
dc.subjectsilicon carbideen
dc.subjectsurface decompositionen
dc.subjectspectroellipsometryen
dc.titleSpectroscopic ellipsometry of carbon nanotube formation in SiC surface decompositionen
dc.typearticleen

Files

Collections

Publikační činnost VŠB-TUO ve Web of Science / Publications of VŠB-TUO in Web of Science
Publikační činnost Institutu fyziky / Publications of Institute of Physics (516)