Sputtered of ZnO:Al thin films for application in photovoltaic solar cells

Abstract

High transparent and conductive, aluminium - doped zinc oxide thin films (ZnO:Al), were prepared by radio – frequency (RF) diode sputtering from ZnO+2 wt. % Al2O3 target on Eutal glass substrates. Surfaces of the samples were treated by various technological steps during preparation. The ion bombardment and the substrate temperature modified their structure, surface morphology, electrical and optical parameters. In this work we present changes between samples prepared at room temperature (RT) and at 200°C, between samples on ion etched substrate and non-modified substrate, and effect of ion etching of the sample surface. We measured transmittance, resistivity and microroughness by AFM on all samples.