Impact of Work Function Tunability on Thermal and RF Performance of P-type Window based Junctionless Transistor

Abstract

The choice of gate metal technology for junctionless transistors needs to have diverse charac- teristics as metals have distinct work functions and hence, they show incompatibility while tailoring thresh- old of the device. In such a scenario, bimetallic stacked gate can be a promising candidate to present wide range of tunable work functions required for nano- regime junctionless transistors. This paper explores the electronic phenomena occurring at metal-metal inter- face and the impact of Platinum (Pt)/Titanium (Ti) bimetallic stacked gate-based work function tunabil- ity on the RF and thermal performances of p-type window-based Silicon on Insulator Junctionless Tran- sistor (SOI JLT) using numerical simulator SILVACO ATLAS. The parameters considered for performance evaluation are ON-state current (ION ), OFF-state cur- rent (IOF F ), ION /IOF F ratio, transconductance (gm), cutoff frequency (fT ), Transconductance Frequency Product (TFP), Intrinsic Gate Delay (IGD), intrin- sic gain (AV ), and Global Device Temperature (GDT). The gm, fT , TFP, AV and GDT improve for modi- fied over conventional in the ON state at higher work function, while IGD improves at lower work function. The improvements of 11.7 % and 2.21 % are obtained in maximum gm and fT , respectively, for modified tran- sistor over conventional. The findings suggest that bimetallic stacked gate modified SOIJLT is a better op- tion than conventional for low-power RF application.