Nástroj pro návrh a dimenzování výkonových polovodičových měničů z hlediska ztrátového výkonu

Abstract

This master’s thesis deals with the calculation of power dissipation in semiconductor converters. It describes the origin and distribution of power losses and the properties of power components (IGBT, SiC MOSFET, diodes, thyristors) affecting power dissipation. The main contribution of the thesis is a computational tool developed in Excel, which includes temperature-dependent parameters of semiconductor components and allows the calculation of power dissipation or junction temperature in various converter topologies. The calculations are based on the SemiSel simulation tool and SEMIKRON modules. The tool is intended primarily for students of the course Design of Semiconductor Converters and the thesis also serves as a methodological guide. The thesis also includes a comparison of modulation techniques in terms of their influence on power dissipation.