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Application of Cl2/BCl3/Ar plasma treatment in the improvement of Ti/Al/Mo/Au ohmic contacts

dc.contributor.authorGryglewicz, Jacek
dc.contributor.authorMacherzyński, Wojciech
dc.contributor.authorStafiniak, Andrzej
dc.contributor.authorPaszkiewicz, Bogdan
dc.contributor.authorPaszkiewicz, Regina
dc.date.accessioned2017-01-11T09:13:08Z
dc.date.available2017-01-11T09:13:08Z
dc.date.issued2016
dc.identifier.citationAdvances in electrical and electronic engineering. 2016, vol. 14, no. 2, p. 218-222 : ill.cs
dc.identifier.issn1336-1376
dc.identifier.issn1804-3119
dc.identifier.urihttp://hdl.handle.net/10084/116590
dc.description.abstractSignificant improvement of Ti/Al/Mo/Au ohmic contacts deposited on previously Cl2/BCl3/Ar plasma treated surface was observed. The standard deviation of contact resistance was crucially reduced due to the incorporation of Cl2/BCl3/Ar plasma treatment. The Cl2:BCl3:Ar gas mixture was used in order to thin the top of AlGaN layer prior to deposition of Ti/Al/Mo/Au ohmic contacts. The surface morphology of AlGaN was investigated using scanning electron microscopy and atomic force microscopy. TLM measurements revealed a consequential decrease of contact resistivity.cs
dc.format.extent650666 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoencs
dc.publisherVysoká škola báňská - Technická univerzita Ostravacs
dc.relation.ispartofseriesAdvances in electrical and electronic engineeringcs
dc.relation.urihttp://dx.doi.org/10.15598/aeee.v14i2.1589cs
dc.rights© Vysoká škola báňská - Technická univerzita Ostrava
dc.rightsCreative Commons Attribution 3.0 Unported (CC BY 3.0)
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.subjectAlGaNcs
dc.subjectGaNcs
dc.subjectohmic metallizationcs
dc.subjectrecesscs
dc.subjectTi/Al/Mo/Aucs
dc.titleApplication of Cl2/BCl3/Ar plasma treatment in the improvement of Ti/Al/Mo/Au ohmic contactscs
dc.typearticlecs
dc.identifier.doi10.15598/aeee.v14i2.1589
dc.rights.accessopenAccess
dc.type.versionpublishedVersioncs
dc.type.statusPeer-reviewedcs


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