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GaInNAs/GaAs QW based structures to compensate parasitic effect of quantum-confined stark effect in photodetector applications

dc.contributor.authorBielak, Katarzyna
dc.contributor.authorPucicki, Damian
dc.contributor.authorDawidowski, Wojciech
dc.contributor.authorBadura, Mikołaj
dc.contributor.authorŚciana, Beata
dc.contributor.authorTłaczała, Marek
dc.date.accessioned2018-11-07T08:15:04Z
dc.date.available2018-11-07T08:15:04Z
dc.date.issued2018
dc.identifier.citationAdvances in electrical and electronic engineering. 2018, vol. 16, no. 3, p. 374-379 : ill.cs
dc.identifier.issn1336-1376
dc.identifier.issn1804-3119
dc.identifier.urihttp://hdl.handle.net/10084/132828
dc.description.abstractThe inhomogeneities of multicomponent semiconductor alloys, as well as phase segregation, can be utilized for enhancement of photodetector absorption properties and thus its efficiency. In this paper, the influence of external electric field on the probability of light absorption in the GaInNAs quantum well is discussed. Both phenomenon: indium and nitrogen composition gradient as well as step-like quantum well are applied to design the QW with compensation of the Quantum-Confined Stark Effect (QCSE) Parasitic effect of QCSE results from decrease of the wave functions overlapping in the QWs placed in reverse biased junction, which finally decrease the efficiency of the photodetector.cs
dc.format.extent852701 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoencs
dc.publisherVysoká škola báňská - Technická univerzita Ostravacs
dc.relation.ispartofseriesAdvances in electrical and electronic engineeringcs
dc.relation.urihttp://dx.doi.org/10.15598/aeee.v16i3.2751cs
dc.rights© Vysoká škola báňská - Technická univerzita Ostrava
dc.rightsAttribution-NoDerivatives 4.0 International*
dc.rights.urihttp://creativecommons.org/licenses/by-nd/4.0/*
dc.subjectdilute nitridescs
dc.subjectmulticomponent semiconductorcs
dc.subjectphotodetectorscs
dc.subjectQuantum-Confined Stark Effectcs
dc.titleGaInNAs/GaAs QW based structures to compensate parasitic effect of quantum-confined stark effect in photodetector applicationscs
dc.typearticlecs
dc.identifier.doi10.15598/aeee.v16i3.2751
dc.rights.accessopenAccesscs
dc.type.versionpublishedVersioncs
dc.type.statusPeer-reviewedcs


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