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Optical measurements of silicon wafer temperature

dc.contributor.authorPostava, Kamil
dc.contributor.authorAoyama, Mitsuru
dc.contributor.authorMistrík, Jan
dc.contributor.authorYamaguchi, Tomuo
dc.contributor.authorShio, K.
dc.date.accessioned2007-12-17T09:16:55Z
dc.date.available2007-12-17T09:16:55Z
dc.date.issued2007
dc.identifier.citationApplied Surface Science. 2007, vol. 254, issues 1, p. 416-419.en
dc.identifier.issn0169-4332
dc.identifier.urihttp://hdl.handle.net/10084/64482
dc.descriptionIssue 1 (2007): International Conference on Solid Films and Surfaces : ICSFS 13, San Carlos de Bariloche, Argentina, November 6-10, 2006. Proceedingen
dc.language.isoenen
dc.publisherNorth-Hollanden
dc.relation.ispartofseriesApplied Surface Scienceen
dc.relation.urihttp://dx.doi.org/10.1016/j.apsusc.2007.07.086en
dc.subjectnon-contact temperature measurementen
dc.subjectsilicon waferen
dc.subjectpolarized reflectivityen
dc.subjectellipsometryen
dc.titleOptical measurements of silicon wafer temperatureen
dc.typearticleen
dc.identifier.locationNení ve fondu ÚKen
dc.description.abstract-enAn optical technique for precise, non-contact, and real time measurement of silicon wafer temperature that uses the polarized reflectivity ratio Rp/Rs is described. The proposed method is based on temperature dependence of the optical functions of silicon. Expected strong temperature sensitivity is obtained near band gap. Simultaneous monitoring of temperature and oxide layer thickness is discussed using measurements at four wavelength 365 nm, 405 nm, 546 nm, and 820 nm.en
dc.identifier.doi10.1016/j.apsusc.2007.07.086
dc.identifier.wos000250800100094


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