New possibilities of power electronic structures using SiC technology
| dc.contributor.author | Šul, R. | |
| dc.contributor.author | Dobrucký, Branislav | |
| dc.contributor.author | Ovcarčík, Radovan | |
| dc.date.accessioned | 2011-01-31T15:18:58Z | |
| dc.date.available | 2011-01-31T15:18:58Z | |
| dc.date.issued | 2006 | |
| dc.identifier.citation | Advances in electrical and electronic engineering. 2006, vol. 5, no. 3, p. 64-67. | en |
| dc.identifier.issn | 1336-1376 | |
| dc.identifier.uri | http://hdl.handle.net/10084/83768 | |
| dc.description.abstract | This paper is dedicated to the recent unprecedented boom of SiC electronic technology. The contribution deals with brief survey of those properties. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are given for several large-scale applications on the end of the contribution. The basic properties of SiC material have been discussed already on the beginning of 80’s, also at our university [1]. | en |
| dc.format.extent | 162428 bytes | cs |
| dc.format.mimetype | application/pdf | cs |
| dc.language.iso | en | en |
| dc.publisher | Žilinská univerzita v Žiline. Elektrotechnická fakulta | en |
| dc.relation.ispartofseries | Advances in electrical and electronic engineering | en |
| dc.relation.uri | http://advances.utc.sk/index.php/AEEE | en |
| dc.rights | Creative Commons Attribution 3.0 Unported (CC BY 3.0) | en |
| dc.rights | © Žilinská univerzita v Žiline. Elektrotechnická fakulta | en |
| dc.rights.uri | http://creativecommons.org/licenses/by/3.0/ | en |
| dc.title | New possibilities of power electronic structures using SiC technology | en |
| dc.type | article | en |
| dc.rights.access | openAccess | |
| dc.type.version | publishedVersion | cs |
| dc.type.status | Peer-reviewed | cs |
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AEEE. 2006, vol. 5 [100]
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OpenAIRE [5085]
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