dc.contributor.author | Harmatha, L. | |
dc.contributor.author | Ballo, P. | |
dc.contributor.author | Breza, J. | |
dc.contributor.author | Písečný, P. | |
dc.contributor.author | Ťapajna, M. | |
dc.date.accessioned | 2011-02-02T11:30:53Z | |
dc.date.available | 2011-02-02T11:30:53Z | |
dc.date.issued | 2006 | |
dc.identifier.citation | Advances in electrical and electronic engineering. 2006, vol. 5, no. 3, p. 334-336. | en |
dc.identifier.issn | 1336-1376 | |
dc.identifier.uri | http://hdl.handle.net/10084/83833 | |
dc.description.abstract | The article presents the results of capacitance measurements on MOS structures with a silicon substrate that was
doped by nitrogen during the growth of the single crystal by Czochralski’s method. Attention is paid to the energy
distribution of the trap density at the Si-SiO2 interface. The effect of the bond of nitrogen and oxygen brought about a slight
increase in the trap density with a typical distribution of energy maxima of the deep levels in the forbidden band of Si. | en |
dc.format.extent | 135921 bytes | cs |
dc.format.mimetype | application/pdf | cs |
dc.language.iso | en | en |
dc.publisher | Žilinská univerzita v Žiline. Elektrotechnická fakulta | en |
dc.relation.ispartofseries | Advances in electrical and electronic engineering | en |
dc.relation.uri | http://advances.utc.sk/index.php/AEEE | en |
dc.rights | Creative Commons Attribution 3.0 Unported (CC BY 3.0) | en |
dc.rights | © Žilinská univerzita v Žiline. Elektrotechnická fakulta | en |
dc.rights.uri | http://creativecommons.org/licenses/by/3.0/ | en |
dc.title | Properties of the Si-SiO2 interfaces in MOS structures with nitrogen doped silicon | en |
dc.type | article | en |
dc.rights.access | openAccess | |
dc.type.version | publishedVersion | cs |
dc.type.status | Peer-reviewed | cs |