Epitaxial layers of InP doped with rare elements for use in radiation detector

dc.contributor.author	Kozák, H.
dc.contributor.author	Sopko, B.
dc.contributor.author	Ždánsky, K.
dc.date.accessioned	2011-02-03T09:17:26Z
dc.date.available	2011-02-03T09:17:26Z
dc.date.issued	2007
dc.identifier.citation	Advances in electrical and electronic engineering. 2007, vol. 6, no. 1, p. 16-18.	en
dc.identifier.issn	1336-1376
dc.identifier.uri	http://hdl.handle.net/10084/83858
dc.description.abstract	We have focused on the investigation of the impact of Ce, Eu, Tm, Eu2O3 and Tm2O3 addition in LPE growth process on the properties of InP layers in the context of their application in detector structures.	en
dc.format.extent	157551 bytes	cs
dc.format.mimetype	application/pdf	cs
dc.language.iso	en	en
dc.publisher	Žilinská univerzita v Žiline. Elektrotechnická fakulta	en
dc.relation.ispartofseries	Advances in electrical and electronic engineering	en
dc.relation.uri	http://advances.utc.sk/index.php/AEEE	en
dc.rights	Creative Commons Attribution 3.0 Unported (CC BY 3.0)
dc.rights	© Žilinská univerzita v Žiline. Elektrotechnická fakulta
dc.rights.uri	http://creativecommons.org/licenses/by/3.0/
dc.title	Epitaxial layers of InP doped with rare elements for use in radiation detector	en
dc.type	article	en
dc.rights.access	openAccess
dc.type.version	publishedVersion	cs
dc.type.status	Peer-reviewed	cs

AEEE. 2007, vol. 6 [26]
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