dc.contributor.author | Dudáš, Ján | |
dc.contributor.author | Gabáni, Stanislav | |
dc.contributor.author | Bagi, Jozef | |
dc.contributor.author | Goščiaňska, Iwona | |
dc.contributor.author | Hodulíková, Anna | |
dc.date.accessioned | 2011-02-08T13:15:49Z | |
dc.date.available | 2011-02-08T13:15:49Z | |
dc.date.issued | 2010 | |
dc.identifier.citation | Advances in electrical and electronic engineering. 2010, vol. 8, no. 1, p. 29-33. | en |
dc.identifier.issn | 1804-3119 | |
dc.identifier.uri | http://hdl.handle.net/10084/84158 | |
dc.description.abstract | High precision electrical resistance
measurements were performed in the low temperature
range from 4.2 K up to room temperature on a holmium
bulk sample, and on holmium thin films in magnetic field.
The X-ray diffraction of Ho films confirmed their
preferential crystal orientation and revealed diffraction
peaks originating from the h.c.p. structure of Ho and those
from inessential holmium dihydrid content. The TN value
of these films decreased with decreasing film thickness.
Magnetic field applied parallel to the thin film plane
caused an increasing suppression of the TN value up to 5 K
with increasing flux density value up to 5 T. | en |
dc.format.extent | 552056 bytes | cs |
dc.format.mimetype | application/pdf | cs |
dc.language.iso | en | en |
dc.publisher | Vysoká škola báňská - Technická univerzita Ostrava | en |
dc.relation.ispartofseries | Advances in electrical and electronic engineering | en |
dc.relation.uri | http://advances.utc.sk/index.php/AEEE | en |
dc.rights | Creative Commons Attribution 3.0 Unported (CC BY 3.0) | |
dc.rights | © Vysoká škola báňská - Technická univerzita Ostrava | |
dc.rights.uri | http://creativecommons.org/licenses/by/3.0/ | |
dc.title | Influence of magnetic field on electric charge trasport in Holmium thin film at low temperature | en |
dc.type | article | en |
dc.rights.access | openAccess | |
dc.type.version | publishedVersion | cs |
dc.type.status | Peer-reviewed | cs |