Graphene field effect transistors: A sensitive platform for detecting sarin

dc.contributor.authorAlzate-Carvajal, Natalia
dc.contributor.authorPark, Jaewoo
dc.contributor.authorPykal, Martin
dc.contributor.authorLazar, Petr
dc.contributor.authorRautela, Ranjana
dc.contributor.authorScarfe, Samantha
dc.contributor.authorScarfe, Lukas
dc.contributor.authorMénard, Jean-Michel
dc.contributor.authorOtyepka, Michal
dc.contributor.authorLuican-Mayer, Adina
dc.date.accessioned2022-04-12T10:13:18Z
dc.date.available2022-04-12T10:13:18Z
dc.date.issued2021
dc.description.abstractReal time, rapid, and accurate detection of chemical warfare agents (CWA) is an ongoing security challenge. Typical detection methods for CWA are adapted from traditional chemistry techniques such as chromatography and mass spectrometry, which lack portability. Here, we address this challenge by evaluating graphene field effect transistors (GFETs) as a sensing platform for sarin gas using both experiment and theory. Experimentally, we measure the sensing response of GFETs when exposed to dimethyl methylphosphonate (DMMP), a less toxic compound used as simulant due to its chemical similarities to sarin. We find low detection limits of 800 ppb, the highest sensitivity reported up to date for this type of sensing platform. In addition to changes in resistance, we implement an in-operando monitor of the GFETs characteristics during and after exposure to the analyte, which gives insights into the graphene-DMMP interactions. Moreover, using theoretical calculations, we show that DMMP and satin interact similarly with graphene, implying that GFETs should be highly sensitive to detecting sarin. GFETs offer a versatile platform for the development of compact and miniaturized devices that can provide real-time detection of dangerous chemicals in the local environment.cs
dc.description.firstpage61751cs
dc.description.issue51cs
dc.description.lastpage61757cs
dc.description.sourceWeb of Sciencecs
dc.description.volume13cs
dc.identifier.citationACS Applied Materials & Interfaces. 2021, vol. 13, issue 51, p. 61751-61757.cs
dc.identifier.doi10.1021/acsami.1c17770
dc.identifier.issn1944-8244
dc.identifier.issn1944-8252
dc.identifier.urihttp://hdl.handle.net/10084/146039
dc.identifier.wos000733774900001
dc.language.isoencs
dc.publisherAmerican Chemical Societycs
dc.relation.ispartofseriesACS Applied Materials & Interfacescs
dc.relation.urihttps://doi.org/10.1021/acsami.1c17770cs
dc.rightsCopyright © 2021, American Chemical Societycs
dc.subjectgraphenecs
dc.subjectsensingcs
dc.subjectchemical warfare agentscs
dc.subject2D materialscs
dc.subjectDFTcs
dc.titleGraphene field effect transistors: A sensitive platform for detecting sarincs
dc.typearticlecs
dc.type.statusPeer-reviewedcs

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