Epitaxial layers of InP doped with rare elements for use in radiation detector

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dc.contributor.authorKozák, H.
dc.contributor.authorSopko, B.
dc.contributor.authorŽdánsky, K.
dc.date.accessioned2011-02-03T09:17:26Z
dc.date.available2011-02-03T09:17:26Z
dc.date.issued2007
dc.description.abstractWe have focused on the investigation of the impact of Ce, Eu, Tm, Eu2O3 and Tm2O3 addition in LPE growth process on the properties of InP layers in the context of their application in detector structures.en
dc.format.extent157551 bytescs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citationAdvances in electrical and electronic engineering. 2007, vol. 6, no. 1, p. 16-18.en
dc.identifier.issn1336-1376
dc.identifier.urihttp://hdl.handle.net/10084/83858
dc.language.isoenen
dc.publisherŽilinská univerzita v Žiline. Elektrotechnická fakultaen
dc.relation.ispartofseriesAdvances in electrical and electronic engineeringen
dc.relation.urihttp://advances.utc.sk/index.php/AEEEen
dc.rightsCreative Commons Attribution 3.0 Unported (CC BY 3.0)
dc.rights© Žilinská univerzita v Žiline. Elektrotechnická fakulta
dc.rights.accessopenAccess
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/
dc.titleEpitaxial layers of InP doped with rare elements for use in radiation detectoren
dc.typearticleen
dc.type.statusPeer-reviewedcs
dc.type.versionpublishedVersioncs

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