Properties of the Si-SiO2 interfaces in MOS structures with nitrogen doped silicon
| dc.contributor.author | Harmatha, L. | |
| dc.contributor.author | Ballo, P. | |
| dc.contributor.author | Breza, J. | |
| dc.contributor.author | Písečný, P. | |
| dc.contributor.author | Ťapajna, M. | |
| dc.date.accessioned | 2011-02-02T11:30:53Z | |
| dc.date.available | 2011-02-02T11:30:53Z | |
| dc.date.issued | 2006 | |
| dc.description.abstract | The article presents the results of capacitance measurements on MOS structures with a silicon substrate that was doped by nitrogen during the growth of the single crystal by Czochralski’s method. Attention is paid to the energy distribution of the trap density at the Si-SiO2 interface. The effect of the bond of nitrogen and oxygen brought about a slight increase in the trap density with a typical distribution of energy maxima of the deep levels in the forbidden band of Si. | en |
| dc.format.extent | 135921 bytes | cs |
| dc.format.mimetype | application/pdf | cs |
| dc.identifier.citation | Advances in electrical and electronic engineering. 2006, vol. 5, no. 3, p. 334-336. | en |
| dc.identifier.issn | 1336-1376 | |
| dc.identifier.uri | http://hdl.handle.net/10084/83833 | |
| dc.language.iso | en | en |
| dc.publisher | Žilinská univerzita v Žiline. Elektrotechnická fakulta | en |
| dc.relation.ispartofseries | Advances in electrical and electronic engineering | en |
| dc.relation.uri | http://advances.utc.sk/index.php/AEEE | en |
| dc.rights | Creative Commons Attribution 3.0 Unported (CC BY 3.0) | en |
| dc.rights | © Žilinská univerzita v Žiline. Elektrotechnická fakulta | en |
| dc.rights.access | openAccess | |
| dc.rights.uri | http://creativecommons.org/licenses/by/3.0/ | en |
| dc.title | Properties of the Si-SiO2 interfaces in MOS structures with nitrogen doped silicon | en |
| dc.type | article | en |
| dc.type.status | Peer-reviewed | cs |
| dc.type.version | publishedVersion | cs |