Semiconductors for nanoplasmonics

Abstract

The plasmonic properties of semiconductors, transparent conductive oxides, transition metal nitrides, noble metals and aluminium are discussed in this article. It is shown that for each frequency in the wide range of 1 meV up to 15 eV the material with appropriate plasmonic properties can be chosen. Special attention is devoted to the semiconductors due to their tunability, extremely low effective masses and exceptionally high carrier mobility that allows to creation of plasmonic structures operating in the terahertz region.