Optical measurements of silicon wafer temperature

Show simple item record
dc.contributor.authorPostava, Kamil
dc.contributor.authorAoyama, Mitsuru
dc.contributor.authorMistrík, Jan
dc.contributor.authorYamaguchi, Tomuo
dc.contributor.authorShio, K.
dc.date.accessioned2007-12-17T09:16:55Z
dc.date.available2007-12-17T09:16:55Z
dc.date.issued2007
dc.descriptionIssue 1 (2007): International Conference on Solid Films and Surfaces : ICSFS 13, San Carlos de Bariloche, Argentina, November 6-10, 2006. Proceedingen
dc.description.abstract-enAn optical technique for precise, non-contact, and real time measurement of silicon wafer temperature that uses the polarized reflectivity ratio Rp/Rs is described. The proposed method is based on temperature dependence of the optical functions of silicon. Expected strong temperature sensitivity is obtained near band gap. Simultaneous monitoring of temperature and oxide layer thickness is discussed using measurements at four wavelength 365 nm, 405 nm, 546 nm, and 820 nm.en
dc.identifier.citationApplied Surface Science. 2007, vol. 254, issues 1, p. 416-419.en
dc.identifier.doi10.1016/j.apsusc.2007.07.086
dc.identifier.issn0169-4332
dc.identifier.locationNení ve fondu ÚKen
dc.identifier.urihttp://hdl.handle.net/10084/64482
dc.identifier.wos000250800100094
dc.language.isoenen
dc.publisherNorth-Hollanden
dc.relation.ispartofseriesApplied Surface Scienceen
dc.relation.urihttp://dx.doi.org/10.1016/j.apsusc.2007.07.086en
dc.subjectnon-contact temperature measurementen
dc.subjectsilicon waferen
dc.subjectpolarized reflectivityen
dc.subjectellipsometryen
dc.titleOptical measurements of silicon wafer temperatureen
dc.typearticleen

Files

Collections

Publikační činnost VŠB-TUO ve Web of Science / Publications of VŠB-TUO in Web of Science
Publikační činnost Institutu fyziky / Publications of Institute of Physics (516)