Modernizace laboratorní výuky předmětu výkonové spínací prvky

Abstract

The main aim of this bachelor thesis is to describe the properties of semiconductive material SiC and features differences between them and commonly used silicon based components and a discussion about the problematics of applying their gate driver. Furthemore, in the practical part of the thesis, a proposal is presented for a revisal of measurement station for measuring static and dynamic properties of power switching devices based on Silicon in a way, that there will be a possibility for measuring Silicon Carbide based devices.