Theoretical and experimental study of plasmonic effects in heavily doped gallium arsenide and indium phosphide

Abstract

Dispersion plasmonic interaction at an interface between a doped semiconductor and a dielectric is employed to use experimental data for determining the plasma frequency, the relaxation time, the effective mass, and the mobility of free electrons in heavily donor-doped gallium arsenide (GaAs) and indium phosphide (InP). A new solution for a plasmonic resonance at a semiconductor/dielectric interface found recently is exploited advantageously when analyzing the experimental data. Two independent measurement methods were used, namely the infrared reflectivity and the Raman scattering. Results indicate a good agreement with known data while pointing to some inaccuracies reported, and suggest a new alternative and accurate means to determine these important semiconductor parameters.