Experimental Analysis of Communitation Process of Power Semiconductor Transistor’s Structures

dc.contributor.authorŠpánik, Pavol
dc.contributor.authorDobrucký, Branislav
dc.contributor.authorFrívaldský, Michal
dc.contributor.authorDrgoňa, Peter
dc.contributor.authorLokšeninec, Ivan
dc.date.accessioned2011-02-03T09:39:54Z
dc.date.available2011-02-03T09:39:54Z
dc.date.issued2007
dc.description.abstractThe paper deals with testing device designed for experimental examination of processes in power electronics devices during various switching modes is described. Through the use of auxiliary circuits additional switching modes (ZVS, ZCS) are realized except hard switching, and turning-off with reduced current respectively. The device´s advantage is possibility of fine dead time setting, allowing us analyzing the effects of phenomenon noted above, on measurements of commutation losses.en
dc.format.extent174234 bytescs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citationAdvances in electrical and electronic engineering. 2007, vol. 6, no. 1, p. 50-53.en
dc.identifier.issn1336-1376
dc.identifier.urihttp://hdl.handle.net/10084/83865
dc.language.isoenen
dc.publisherŽilinská univerzita v Žiline. Elektrotechnická fakultaen
dc.relation.ispartofseriesAdvances in electrical and electronic engineeringen
dc.relation.urihttp://advances.utc.sk/index.php/AEEEen
dc.rightsCreative Commons Attribution 3.0 Unported (CC BY 3.0)
dc.rights© Žilinská univerzita v Žiline. Elektrotechnická fakulta
dc.rights.accessopenAccess
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/
dc.titleExperimental Analysis of Communitation Process of Power Semiconductor Transistor’s Structuresen
dc.typearticleen
dc.type.statusPeer-reviewedcs
dc.type.versionpublishedVersioncs

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