New possibilities of power electronic structures using SiC technology
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Šul, R.
Dobrucký, Branislav
Ovcarčík, Radovan
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Žilinská univerzita v Žiline. Elektrotechnická fakulta
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Abstract
This paper is dedicated to the recent unprecedented boom of SiC electronic technology. The contribution deals
with brief survey of those properties. In particular, the differences (both good and bad) between SiC electronics technology
and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are given for
several large-scale applications on the end of the contribution. The basic properties of SiC material have been discussed
already on the beginning of 80’s, also at our university [1].
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Advances in electrical and electronic engineering. 2006, vol. 5, no. 3, p. 64-67.