Moderní trendy v oblasti SiC polovodičů
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Pavlů, Libor
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Vysoká škola báňská - Technická univerzita Ostrava
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Abstract
This thesis deals with the description, the characteristics of the crystal structures of compounds of silicon carbide and their differences in the crystal structure. Availability of SiC semiconductors was found out by market research. I devote to these SiC semiconductors, and describe their construction, properties, and applications.For comparison Si semiconductor with SiC, modeling of static characteristics in simulation programs is used. These simulations are supported by the results of the practical measurement of static and dynamic characteristics of different types of transistors based on silicon and silicon carbide.
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Import 26/06/2013
Subject(s)
Silicon carbide (SiC), polytype, SiC Schottkyho diodes, SiC Thyristor, SiC MOSFET, SiC IGBT