Ofstatistical and fractal properties of semiconductor surface roughness

Abstract

Surface morphology evolution is of primary significance for the thin-film growth and modification of surface and interface states. Surface and interface states substantially influence the electrical and optical properties of the semiconductor structure. Statistical and fractal properties of semiconductor rough surfaces were determined by analysis of the AFM images. In this paper statistical characteristics of the AFM height function distribution, fractal dimension, lacunarity and granulometric density values are used for the surface morphology of the SiC samples description. The results can be used for solution of the microstructural and optical properties of given semiconductor structure.