Ofstatistical and fractal properties of semiconductor surface roughness

dc.contributor.authorJurečka, Stanislav
dc.contributor.authorJurečková, Mária
dc.contributor.authorKobayashi, Hikaru
dc.contributor.authorTakahashi, Masao
dc.contributor.authorMadani, Mohammad
dc.contributor.authorPinčík, Emil
dc.date.accessioned2011-02-10T08:02:49Z
dc.date.available2011-02-10T08:02:49Z
dc.date.issued2008
dc.description.abstractSurface morphology evolution is of primary significance for the thin-film growth and modification of surface and interface states. Surface and interface states substantially influence the electrical and optical properties of the semiconductor structure. Statistical and fractal properties of semiconductor rough surfaces were determined by analysis of the AFM images. In this paper statistical characteristics of the AFM height function distribution, fractal dimension, lacunarity and granulometric density values are used for the surface morphology of the SiC samples description. The results can be used for solution of the microstructural and optical properties of given semiconductor structure.en
dc.format.extent737053 bytescs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citationAdvances in electrical and electronic engineering. 2008, vol. 7, no. 1, 2, p. 377-381.en
dc.identifier.issn1336-1376
dc.identifier.urihttp://hdl.handle.net/10084/84217
dc.language.isoenen
dc.publisherŽilinská univerzita v Žiline. Elektrotechnická fakultaen
dc.relation.ispartofseriesAdvances in electrical and electronic engineeringen
dc.relation.urihttp://advances.utc.sk/index.php/AEEEen
dc.rightsCreative Commons Attribution 3.0 Unported (CC BY 3.0)
dc.rights© Žilinská univerzita v Žiline. Elektrotechnická fakulta
dc.rights.accessopenAccess
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/
dc.titleOfstatistical and fractal properties of semiconductor surface roughnessen
dc.typearticleen
dc.type.statusPeer-reviewedcs
dc.type.versionpublishedVersioncs

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